New Product
SiR800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
150
120
90
60
30
0
Package Limited
0
25
50
75
100
125
150
T C - Case Temperature (°C)
Current Derating*
90
72
54
36
18
0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T C - Case Temperature (°C)
Power, Junction-to-Case
T A - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
www.vishay.com
5
相关PDF资料
SIR802DP-T1-GE3 MOSFET N-CH D-S 20V 8-SOIC
SIR826DP-T1-GE3 MOSFET N-CH 80V 60A POWERPAK
SIR844DP-T1-GE3 MOSFET N-CH D-S 25V 8-SOIC
SIR846ADP-T1-GE3 MOSFET N-CH 100V 60A SO8
SIR850DP-T1-GE3 MOSFET N-CH 25V 30A PPAK 8SOIC
SIR862DP-T1-GE3 MOSFET N-CH 25V 8-SOIC
SIR878ADP-T1-GE3 MOSFET N-CH 100V 40A POWERPAK
SIR878DP-T1-GE3 MOSFET N-CH 100V 8-SOIC
相关代理商/技术参数
SIR802DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET
SIR802DP-T1-GE3 功能描述:MOSFET 20 Volts 30 Amps 27.7 Watts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR804DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 100 V (D-S) MOSFET
SIR804DP_12 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 100 V (D-S) MOSFET
SIR804DP-T1-GE3 功能描述:MOSFET 100V 7.2mOhm@10V 60A N-Ch MV T-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR808DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25 V (D-S) MOSFET
SIR808DP-T1-GE3 功能描述:MOSFET 25 Volts 20 Amps 29.8 Watts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR812DP-T1-GE3 功能描述:MOSFET 30V 60A 104W 1.45mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube